Volume 19, Issue 1, November 2015, Pages 171–178
Akash Sanjay Chavhan1 and Mahesh D. Goudar2
1 Dept. of Electronics, MIT Academy of Engineering, Alandi, Pune, India
2 Dept. of Electronics, MIT Academy of Engineering, Alandi, Pune, India
Original language: English
Copyright © 2015 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
In this paper design of a wideband power amplifier is presented. The operating frequency of the power amplifier is from 880 MHz to 960 MHz. The circuit is designed using two 5 W GaN-HEMT. The Wilkinson power divider/combiner is used which is designed using microstrip line. The RF input applied to the power amplifier is divided into two using power divider. The RF signal is amplified in the two amplifier stages and combined. By using linear simulations, a GaN power amplifier circuit was optimized with the input and output return losses obtained as less than -15 dB. Isolation of the PA is approximately -30 dB and the maximum gain is 16.243 dB. The power amplifier is designed in Advanced Design System. The designed power amplifier is useful for GSM application.
Author Keywords: Gallium Nitride, HEMT, wideband, microstrip line, power amplifier.
Akash Sanjay Chavhan1 and Mahesh D. Goudar2
1 Dept. of Electronics, MIT Academy of Engineering, Alandi, Pune, India
2 Dept. of Electronics, MIT Academy of Engineering, Alandi, Pune, India
Original language: English
Copyright © 2015 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
In this paper design of a wideband power amplifier is presented. The operating frequency of the power amplifier is from 880 MHz to 960 MHz. The circuit is designed using two 5 W GaN-HEMT. The Wilkinson power divider/combiner is used which is designed using microstrip line. The RF input applied to the power amplifier is divided into two using power divider. The RF signal is amplified in the two amplifier stages and combined. By using linear simulations, a GaN power amplifier circuit was optimized with the input and output return losses obtained as less than -15 dB. Isolation of the PA is approximately -30 dB and the maximum gain is 16.243 dB. The power amplifier is designed in Advanced Design System. The designed power amplifier is useful for GSM application.
Author Keywords: Gallium Nitride, HEMT, wideband, microstrip line, power amplifier.
How to Cite this Article
Akash Sanjay Chavhan and Mahesh D. Goudar, “Design of High Efficiency Power Amplifier for 900 MHz GSM Application,” International Journal of Innovation and Scientific Research, vol. 19, no. 1, pp. 171–178, November 2015.
