Volume 10, Issue 2, October 2014, Pages 262–266
Yasir Sabir1, Arsalan Shams2, Mudassar Sabir3, and Mansoor Ahmed4
1 Department of Electrical Engineering, University of Engineering and Technology, Taxila – 47050, Pakistan
2 Department of Electrical Engineering, University of Engineering and Technology, Taxila – 47050, Pakistan
3 Department of Physics, School of Natural Sciences, National University of Sciences and Technology, Sector H-12, Islamabad – 44000, Pakistan
4 Faculty of Engineering and Natural Sciences, Sabancı University, Tuzla Istanbul – 34956, Turkey
Original language: English
Copyright © 2014 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Graphene is a wonder material with ultra-fast conductivity due to its zero bandgap structure with outstanding electronic properties. Monolayer graphene based transistors are suitable for analogue electronics as off-state is not required in analogue and radio frequency applications. But to make the bilayer graphene based transistors suitable for digital applications, a bandgap is required for the existence of an off-state. Also, to achieve a higher performance as compared to the rival silicon-CMOS technology, a high ION/IOFF ratio is required. The latest research on bilayer graphene is still in a theoretical and analytical phase, so we present an analytical modeling of a bilayer graphene based field effect transistor (BLGFET) for digital applications. The proposed BLGFET operates on the principle of a Klein tunneling and Klein paradox. This principle is used to develop a model of BLGFET for digital electronics with an excellent ION/IOFF ratio (greater than 106). Bilayer graphene (BLG) has two types depending on the geometry i.e. AA-stacked and AB-stacked. Both types of BLG undergo Klein tunneling and Klein paradox but at different angles. So the expressions for transmission probabilities and the ION/IOFF ratios for both types of BLGs are derived and their corresponding results are plotted using MATLAB.
Author Keywords: Bilayer Graphene Field Effect Transistors, Bandgap, ION/IOFF ratio, AB-stacked BLG and AA-stacked BLG.
Yasir Sabir1, Arsalan Shams2, Mudassar Sabir3, and Mansoor Ahmed4
1 Department of Electrical Engineering, University of Engineering and Technology, Taxila – 47050, Pakistan
2 Department of Electrical Engineering, University of Engineering and Technology, Taxila – 47050, Pakistan
3 Department of Physics, School of Natural Sciences, National University of Sciences and Technology, Sector H-12, Islamabad – 44000, Pakistan
4 Faculty of Engineering and Natural Sciences, Sabancı University, Tuzla Istanbul – 34956, Turkey
Original language: English
Copyright © 2014 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
Graphene is a wonder material with ultra-fast conductivity due to its zero bandgap structure with outstanding electronic properties. Monolayer graphene based transistors are suitable for analogue electronics as off-state is not required in analogue and radio frequency applications. But to make the bilayer graphene based transistors suitable for digital applications, a bandgap is required for the existence of an off-state. Also, to achieve a higher performance as compared to the rival silicon-CMOS technology, a high ION/IOFF ratio is required. The latest research on bilayer graphene is still in a theoretical and analytical phase, so we present an analytical modeling of a bilayer graphene based field effect transistor (BLGFET) for digital applications. The proposed BLGFET operates on the principle of a Klein tunneling and Klein paradox. This principle is used to develop a model of BLGFET for digital electronics with an excellent ION/IOFF ratio (greater than 106). Bilayer graphene (BLG) has two types depending on the geometry i.e. AA-stacked and AB-stacked. Both types of BLG undergo Klein tunneling and Klein paradox but at different angles. So the expressions for transmission probabilities and the ION/IOFF ratios for both types of BLGs are derived and their corresponding results are plotted using MATLAB.
Author Keywords: Bilayer Graphene Field Effect Transistors, Bandgap, ION/IOFF ratio, AB-stacked BLG and AA-stacked BLG.
How to Cite this Article
Yasir Sabir, Arsalan Shams, Mudassar Sabir, and Mansoor Ahmed, “Modeling of Bilayer Graphene Based Field Effect Transistors for Digital Electronics,” International Journal of Innovation and Scientific Research, vol. 10, no. 2, pp. 262–266, October 2014.
