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International Journal of Innovation and Scientific Research
ISSN: 2351-8014
 
 
Tuesday 15 October 2019

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CMOS LNA Design for Ultra Wide Band - Review


Volume 11, Issue 2, November 2014, Pages 356–362

 CMOS LNA Design for Ultra Wide Band - Review

K.B. Satale, A.R. Kaushik, and P.S. Deokar

Original language: English

Received 6 September 2014

Copyright © 2014 ISSR Journals. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract


Low Noise Amplifier (LNA) functions important role in receiver designs. In, microwave receiver LNA circuit plays important role in quality factor of receiver. At radio frequency range, trade-off characteristics like gain, noise figure, stability, power consumption and complexity forces designer for various circuit's simulation for optimizing those. An LNA design presents a considerable challenge because of its simultaneous requirement for high gain, low noise figure, good input and output matching and unconditional stability at the lowest possible current draw from the amplifier. For short range and high data rate wireless applications UWB technology offers a promising solution to the radio frequency. As LNA is most important block included in the UWB front-end RF receiver, we focused this paper on review of LNA design using CMOS technique.

Author Keywords: Low Noise Amplifier (LNA), Ultra Wide Band (UWB), Complementary Metal Oxide Semiconductor (CMOS), Signal to Noise Ratio (SNR).


How to Cite this Article


K.B. Satale, A.R. Kaushik, and P.S. Deokar, “CMOS LNA Design for Ultra Wide Band - Review,” International Journal of Innovation and Scientific Research, vol. 11, no. 2, pp. 356–362, November 2014.